IRF9Z30 Transistor Datasheet, IRF9Z30 Equivalent, PDF Data Sheets. MOSFET. Parameters and Characteristics. Electronic Component Catalog. IRF9Z30 Hexfet Power Mosfet. Features. P-Channel Verasatility Compact Plastic Package Fast Switching Low Drive Current Ease of Paralleling Excellent. Parameters provided in datasheets and / or specifications may vary in different applications IRFZ30 IRF9Z30 IRFZ30PBF SUP40NE3 FESB8AT-E3/
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R DS on max. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. Product specifications do not expand or otherwise modify Vishay s terms and conditions of purchase, including but not limited to the warranty expressed therein. C Soldering Temperature, for 10 seconds 1. Product names and markings noted herein may be trademarks of their respective owners.
Typical Transfer Characteristics Fig. Absolute Maximum Ratings Parameter Max. Repetitive rating; pulse width limited by maximum junction temperature see fig. Applications include motor control, audio amplifiers, switched mode converters, control circuits and pulse amplifiers.
Maximum Drain Current vs. Bryce Goodman 1 years ago Views: Datasneet operating parameters, including typical parameters, must be validated for each customer application by the customer s technical experts.
Switching Time Test Circuit Fig.
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High Performance Schottky Rectifier, 3.
(PDF) IRF9Z30 Datasheet download
Description N-channel 60 V, 0. They retain all of the features of the more common nchannel Power MOSFET s such as voltage control, very fast switching, ease of paralleling, and excellent temperature stability. Typical Output Characteristics Fig. Order code Marking Package Packing. N-channel 60 V, 0.
This device is suitable. The efficient geometry and unique processing of the power MOSFET design achieve very low onstate resistance combined with high transconductance and extreme device ruggedness.
Data Sheet June File Number Typical Gate Charge vs. Order code Marking Packages Packaging.
IRF9Z30 MOSFET P-CH 50V 18A TO-220AB IRF9Z30
High Performance Schottky Rectifier, 1. Storage Temperature Range Soldering Temperature, for 10 seconds 1. Start display at page:. They are also very useful in drive stages because of the circuit versatility offered by the reverse polarity connection.
This advanced technology More information. Thermal Resistance Symbol Parameter Typ.
IRF9Z30 – (IRF9Z30 / IRF9Z34) P-Channel Power MOSFETs
This device is suitable More information. It is the customer s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Pchannel power MOSFETs are intended for use in power stages where complementary symmetry with nchannel devices offers circuit simplification. Such statements are not binding statements about the suitability of products for a particular application.